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B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Name: B772 High Power PNP Transistor Switch Tip PNP Transistor Circuit
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : B772

Collector Power Dissipation : 1.25W

VCEO : -30V

VEBO : -6V

Product name : semiconductor triode type

Tj : 150℃

Type : Triode Transistor

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TO-126 Plastic-Encapsulate Transistors B772 TRANSISTOR (PNP)

FEATURE

Low Speed Switching

MARKING

B772=Device code

Solid dot = Green molding compound device, if none, the normal device XX=Code

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
B772	TO-126	Bulk	200pcs/Bag
B772-TU	TO-126	Tube	60pcs/Tube

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	-40	V
VCEO	Collector-Emitter Voltage	-30	V
VEBO	Emitter-Base Voltage	-6	V
I_C	Collector Current -Continuous	-3	A
P_C	Collector Power Dissipation	1.25	W
RӨJA	Thermal Resistance from Junction to Ambient	100	℃/W
T_j	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=-100μA ,I_E=0	-40			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C= -10mA , I_B=0	-30			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= -100μA,I_C=0	-6			V
Collector cut-off current	ICBO	V_CB= -40V, I_E=0			-1	μA
Collector cut-off current	ICEO	V_CE=-30V, I_B=0			-10	μA
Emitter cut-off current	IEBO	V_EB=-6V, I_C=0			-1	μA
DC current gain	hFE	V_CE= -2V, I_C= -1A	60		400
Collector-emitter saturation voltage	VCE(sat)	I_C=-2A, I_B= -0.2A			-0.5	V
Base-emitter saturation voltage	VBE(sat)	I_C=-2A, I_B= -0.2A			-1.5	V
Transition frequency	fT	V_CE= -5V, I_C=-0.1A f =10MHz	50	80		MHz

CLASSIFICATION OF h_FE(2)

Rank	R	O	Y	GR
Range	60-120	100-200	160-320	200-400

Typical Characteristics

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	3.300	3.700	0.130	0.146
A1	1.100	1.400	0.043	0.055
b	0.380	0.550	0.015	0.022
c	0.360	0.510	0.014	0.020
D	4.300	4.700	0.169	0.185
D1	3.430		0.135
E	4.300	4.700	0.169	0.185
e	1.270 TYP		0.050 TYP
e1	2.440	2.640	0.096	0.104
L	14.100	14.500	0.555	0.571
0		1.600		0.063
h	0.000	0.380	0.000	0.015

B772 High Power PNP Transistor Switch , Tip PNP Transistor Circuit

Product Tags:

tip pnp transistor

high power pnp transistor