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G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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G2012 20V 12A 10mr 2.4W Transistor Mosfet Module AP6982GN2-HF

Name: G2012 20V 12A 10mr 24W Transistor Mosfet Module AP6982GN2HF
Brand: Hua Xuan Yang
Price: 1 USD

Brand Name : Hua Xuan Yang

Model Number : AP6982GN2-HF

Certification : RoHS、SGS

Place of Origin : Shenzhen, China

MOQ : Negotiation

Price : Negotiation

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Delivery Time : 1 - 2 Weeks

Packaging Details : Boxed

Type : Field-Effect Transistor

Product name : AP6982GN2-HF

Quality : Original

Application : home appliances

Logo : Customized

Vth : 0.7V

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G2012 20V 12A 10mr transistor mosfet alternative for AP6982GN2-HF

Description:

AP6982 series are from Advanced Power innovated design and

silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the

designer with an extreme efficient device for use in a wide

range of power applications.

Absolute Maximum Ratings@T_j=25^o.C(unless otherwise specified)

Symbol	Parameter	Rating	Units
VDS	Drain-Source Voltage	20	V
VGS	Gate-Source Voltage	+8	V
I_D@T_A=25℃	Continuous Drain Current³ @ V_GS=4.5V	11	A
I_D@T_A=70℃	Continuous Drain Current³ @ V_GS=4.5V	8.7	A
IDM	Pulsed Drain Current¹	40	A
P_D@T_A=25℃	Total Power Dissipation³	2.4	W
TSTG	Storage Temperature Range	-55 to 150	℃
T_J	Operating Junction Temperature Range	-55 to 150	℃

Thermal Data

Symbol	Parameter	Value	Unit
Rthj-a	Maximum Thermal Resistance, Junction-ambient³	52	℃/W

Electrical Characteristics@T_j=25^oC(unless otherwise specified)

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
BVDSS	Drain-Source Breakdown Voltage	V_GS=0V, I_D=250uA	20	-	-	V
RDS(ON)	Static Drain-Source On-Resistance²	V_GS=4.5V, I_D=10A	-	9.3	12.5	mΩ
		V_GS=2.5V, I_D=5A	-	11.3	16	mΩ
		V_GS=1.8V, I_D=2A	-	15	21	mΩ
VGS(th)	Gate Threshold Voltage	V_DS=V_GS, I_D=250uA	0.3	0.5	1	V
gfs	Forward Transconductance	V_DS=5V, I_D=10A	-	34	-	S
IDSS	Drain-Source Leakage Current	V_DS=16V, V_GS=0V	-	-	10	uA
IGSS	Gate-Source Leakage	V_GS=+8V, V_DS=0V	-	-	+100	nA
Q_g	Total Gate Charge	I_D=10A V_DS=10V V_GS=4.5V	-	22	35.2	nC
Qgs	Gate-Source Charge		-	2.5	-	nC
Qgd	Gate-Drain ("Miller") Charge		-	7	-	nC
td(on)	Turn-on Delay Time	V_DS=10V	-	9	-	ns
t_r	Rise Time	I_D=1A	-	13	-	ns
td(off)	Turn-off Delay Time	R_G=3.3Ω	-	40	-	ns
t_f	Fall Time	V_GS=5V	-	10	-	ns
t_f	Fall Time		-	10	-	ns
Ciss	Input Capacitance	V_GS=0V V_DS=10V f=1.0MHz	-	1500	2400	pF
Coss	Output Capacitance		-	170	-	pF
Crss	Reverse Transfer Capacitance		-	155	-	pF
R_g	Gate Resistance	f=1.0MHz	-	2	4	Ω

Source-Drain Diode

Symbol	Parameter	Test Conditions	Min.	Typ.	Max.	Units
VSD	Forward On Voltage²	I_S=2A, V_GS=0V	-	-	1.2	V
trr	Reverse Recovery Time	I_S=10A, V_GS=0V, dI/dt=100A/µs	-	11	-	ns
Qrr	Reverse Recovery Charge	I_S=10A, V_GS=0V, dI/dt=100A/µs	-	5	-	nC

Notes:

1. Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in² 2oz copper pad of FR4 board, t < 10s ; 165^oC/W when mounted on min. copper pad.

This product is sensitive to electrostatic discharge, please handle with care.

This product is not authorized to be used as a critical component of a life support system or other similar systems.

APEC shall not be liable for any liability arising from the application or use of any product or circuit described in this agreement, nor shall it assign any license under its patent rights or assign the rights of others.

APEC reserves the right to make changes to any product in this Agreement without notice to improve reliability, function or design.

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