Electronic component AP1334GEU-HF advantage price for original stock
Description
AP1334 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.
Absolute Maximum Ratings@Tj=25oC.(unless otherwise specified)
| Symbol |
Parameter |
Rating |
Units |
| VDS |
Drain-Source Voltage |
20 |
V |
| VGS |
Gate-Source Voltage |
+8 |
V |
| ID@TA=25℃ |
Drain Current3, VGS @ 4.5V |
2.1 |
A |
| ID@TA=70℃ |
Drain Current3, VGS @ 4.5V |
1.7 |
A |
| IDM |
Pulsed Drain Current1 |
8 |
A |
| PD@TA=25℃ |
Total Power Dissipation |
0.35 |
W |
| TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
| TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
Thermal Data
| Symbol |
Parameter |
Value |
Unit |
| Rthj-a |
Maximum Thermal Resistance, Junction-ambient3 |
360 |
℃/W |
AP1334GEU-H
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
| BVDSS |
Drain-Source Breakdown Voltage |
VGS=0V, ID=250uA |
20 |
- |
- |
V |
| RDS(ON) |
Static Drain-Source On-Resistance2 |
VGS=4.5V, ID=2A |
- |
- |
65 |
mΩ |
| VGS=2.5V, ID=1.5A |
- |
- |
75 |
mΩ |
| VGS=1.8V, ID=1A |
- |
- |
85 |
mΩ |
| VGS(th) |
Gate Threshold Voltage |
VDS=VGS, ID=250uA |
0.3 |
- |
1 |
V |
| gfs |
Forward Transconductance |
VDS=5V, ID=2A |
- |
12 |
- |
S |
| IDSS |
Drain-Source Leakage Current |
VDS=16V, VGS=0V |
- |
- |
10 |
uA |
| IGSS |
Gate-Source Leakage |
VGS=+8V, VDS=0V |
- |
- |
+30 |
uA |
| Qg |
Total Gate Charge |
ID=2A
VDS=10V VGS=4.5V
|
- |
9 |
14.4 |
nC |
| Qgs |
Gate-Source Charge |
- |
1 |
- |
nC |
| Qgd |
Gate-Drain ("Miller") Charge |
- |
2.5 |
- |
nC |
| td(on) |
Turn-on Delay Time |
VDS=10V ID=1A RG=3.3Ω
VGS=5V
|
- |
6 |
- |
ns |
| tr |
Rise Time |
- |
7 |
- |
ns |
| td(off) |
Turn-off Delay Time |
- |
18 |
- |
ns |
| tf |
Fall Time |
- |
3 |
- |
ns |
| Ciss |
Input Capacitance |
VG.S=0V VDS=10V
f=1.0MHz
|
- |
570 |
912 |
pF |
| Coss |
Output Capacitance |
- |
70 |
- |
pF |
| Crss |
Reverse Transfer Capacitance |
- |
60 |
- |
pF |
| Rg |
Gate Resistance |
f=1.0MHz |
- |
2.4 |
4.8 |
Ω |
Source-Drain Diode
| Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
| VSD |
Forward On Voltage2 |
IS=1.2A, VGS=0V |
- |
- |
1.2 |
V |
| trr |
Reverse Recovery Time |
IS=2A, VGS=0V,
dI/dt=100A/µs
|
- |
14 |
- |
ns |
| Qrr |
Reverse Recovery Charge |
- |
7 |
- |
nC |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on FR4 board, t ≦ 10 sec.
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AP1334GEU-HF 0.35W 8A Mosfet Power Transistor New Condition Images
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