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BOM Quotation 1.38W Mosfet Power Transistor APEC AP2344GN-H

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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BOM Quotation 1.38W Mosfet Power Transistor APEC AP2344GN-H

Brand Name : Hua Xuan Yang

Model Number : APEC

Certification : RoHS、SGS

Place of Origin : China

MOQ : Negotiable

Price : Negotiated

Payment Terms : Western Union, L/C, T/T

Supply Ability : 10,000PCS/MONTH

Delivery Time : 1 - 2 Weeks

Packaging Details : Boxed

Application : Power Switch Circuits

Supplier Type : Original manufacturer, Agency, Retailer

VDS : 30V

Operating Temperature : -55 to 150

VGS : -20V to 20V

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Wholesale electronic components Support BOM Quotation AP2344GN-H

Description

AP2344 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications.

The special design SOT-23 package with good thermal performance is widely preferred for all commercial-industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.

Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +8 V
ID@TA=25℃ Drain Current3, VGS @ 4.5V 6.4 A
ID@TA=70℃ Drain Current3, VGS @ 4.5V 5.1 A
IDM Pulsed Drain Current1 20 A
PD@TA=25℃ Total Power Dissipation 1.38 W
TSTG Storage Temperature Range -55 to 150
TJ Operating Junction Temperature Range -55 to 150

Thermal Data

Symbol Parameter Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient3 90 ℃/W

AP2344GN-H

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2 VGS=4.5V, ID=6A - - 22
VGS=2.5V, ID=4A - - 32
VGS=1.8V, ID=2A - - 40
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.4 - 1 V
ID(ON) On state drain current VGS=4.5V, VDS=5V 30 - - A
gfs Forward Transconductance VDS=5V, ID=6A - 27 - S
IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 1 uA
IGSS Gate-Source Leakage VGS=+8V, VDS=0V - - +10 uA
Qg Total Gate Charge

ID=6A

VDS=10V VGS=4.5V

- 22 35.2 nC
Qgs Gate-Source Charge - 2 - nC
Qgd Gate-Drain ("Miller") Charge - 6 - nC
td(on) Turn-on Delay Time VDS=10V - 8 - ns
tr Rise Time ID=1A - 11 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 38 - ns
tf Fall Time VGS=5V - 7 - ns
Ciss Input Capacitance

VGS=0V

VDS=10V f=1.0MHz

- 1520 2430 pF
Coss Output Capacitance - 175 - pF
Crss Reverse Transfer Capacitance - 155 - pF
Rg Gate Resistance f=1.0MHz - 1.2 2.4 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2 IS=1.2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time

IS=6A, VGS=0V,

dI/dt=100A/µs

- 16 - ns
Qrr Reverse Recovery Charge - 8 - nC

FAQ

1.What is our company good at selling and producing?

1B.We have more than 14 years experience on electronic components agency and sales.

And we have our own R&D team and SMT factory on PCBA products

2.What are our strengths?

2B. We provide service to lots of big brand in China.

For electronic components: Our product line is full with different brand and different brand, you can always find the one match your requirement.

For PCBA: We have our own R&D team and SMT factory, accpet OEM. Leadtime and quality is under control.

3.If we have so many items in the BOM list, how long will it take me to get the quotation?

3B.All quotation with be provide within 2 working days

4.How about the quality of your products?How long is the warranty on your product?(Different products)

4B.We promise all product is 100% good.

5. What's your delivery time?(Spot/Custom)

5B.1 week


Product Tags:

BOM Quotation Mosfet Power Transistor

      

BOM Quotation Mosfet Power Transistor

      

AP2344GN-H MOSFET Transistor

      
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